Electrical Characterization of Al-SiO2-Si Capacitors with Thin Gate Oxides Grown on Non-planar Substrates
碩士 === 國立臺灣大學 === 電子工程學研究所 === 100 === Because of the development of process technology of semiconductor and the existence of the Moore， law, the size of device is scaling down continuously. However, shrinking eventually encounters the limit. In order to make the size shrinking continue, non-planar...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87501780105780980523 |