Unipolar Resistive Switching Investigation of ZrO2 and ZrO2-NiO Dielectric Layer
碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 100 === This thesis focuses on the investigation of RRAM (Resistive Switching Random Accessing Memory) using ZrO2 and ZrO2-NiO thin films as dielectric layer and Al as bottom and top electrodes. Performance of the RRAM can be improved by adjusting the amount of oxyge...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11334396072891422012 |