Investigation of Unipolar Resistive Switching AlOx and AlOx+CuOx Dielectric Layers Growth by Plasma Oxidation

碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 100 === To study electrical properties and structural effects on the resistance switch of AlO-based resistance random access memory (ReRAM), we fabricated Al/AlOx/Al and Al/AlOx+CuOx/Al(Cu 5wt%) three-layer structures. The bottom electrode layers were prepared by spu...

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Bibliographic Details
Main Authors: Ya-ting Wu, 吳雅婷
Other Authors: Shyankay Jou
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/40692370186520140684