The Investigation on Subthreshold Behavior Model for the Tri-Material/Dual-Material SOI Triple-Gate MOSFETs with/without the Localized Interface Trapped Charges
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 100 === ITRS2009 (International Technology of Roadmap for Semiconductor) has revealed that the conventional planar transistor is a lack of well-controlled short-channel effects and high packing density. With the strong field confinement, prominent volume conduction, a...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35853489960406120774 |