The Study of Flip Chip Packaging Technique on LEDs by Applying the Al-Ge Eutectic

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 100 === In this study, the fabricated of LED package module by MEMS technology. It uses Al-Ge alloy instead of Au-Sn alloy which is Flip-chip LED material of pattern module electrode package. Using the way of sputter and thermal evaporation, let Al-Ge alloy to grow...

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Main Authors: Guan-Xiang Liao, 廖冠翔
Other Authors: Wen-Ray Chen
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/34bz96
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spelling ndltd-TW-100NYPI51240092019-09-22T03:40:59Z http://ndltd.ncl.edu.tw/handle/34bz96 The Study of Flip Chip Packaging Technique on LEDs by Applying the Al-Ge Eutectic 應用鋁鍺共晶於發光二極體覆晶封裝之研究 Guan-Xiang Liao 廖冠翔 碩士 國立虎尾科技大學 光電與材料科技研究所 100 In this study, the fabricated of LED package module by MEMS technology. It uses Al-Ge alloy instead of Au-Sn alloy which is Flip-chip LED material of pattern module electrode package. Using the way of sputter and thermal evaporation, let Al-Ge alloy to grows on the glass base with 450oC thermocompression. Moreover, using EDS,XRD and ect, as well, to analysis the percentage of the percentage of produces element, to confirm the percentage of element of invariant point and Al-Ge alloy is produce or not. Then, Al-Ge alloy used on LED packaging module, and compact with Au-Sn packaging module in terms of analysis of electrical measurements, and obtain the junction temperature by measurements, and then calculate the series resistance. Finally, comparison and analysis between Al-Ge alloy and Au-Sn alloy of the pros and cons. Wen-Ray Chen 陳文瑞 2012 學位論文 ; thesis 87 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 100 === In this study, the fabricated of LED package module by MEMS technology. It uses Al-Ge alloy instead of Au-Sn alloy which is Flip-chip LED material of pattern module electrode package. Using the way of sputter and thermal evaporation, let Al-Ge alloy to grows on the glass base with 450oC thermocompression. Moreover, using EDS,XRD and ect, as well, to analysis the percentage of the percentage of produces element, to confirm the percentage of element of invariant point and Al-Ge alloy is produce or not. Then, Al-Ge alloy used on LED packaging module, and compact with Au-Sn packaging module in terms of analysis of electrical measurements, and obtain the junction temperature by measurements, and then calculate the series resistance. Finally, comparison and analysis between Al-Ge alloy and Au-Sn alloy of the pros and cons.
author2 Wen-Ray Chen
author_facet Wen-Ray Chen
Guan-Xiang Liao
廖冠翔
author Guan-Xiang Liao
廖冠翔
spellingShingle Guan-Xiang Liao
廖冠翔
The Study of Flip Chip Packaging Technique on LEDs by Applying the Al-Ge Eutectic
author_sort Guan-Xiang Liao
title The Study of Flip Chip Packaging Technique on LEDs by Applying the Al-Ge Eutectic
title_short The Study of Flip Chip Packaging Technique on LEDs by Applying the Al-Ge Eutectic
title_full The Study of Flip Chip Packaging Technique on LEDs by Applying the Al-Ge Eutectic
title_fullStr The Study of Flip Chip Packaging Technique on LEDs by Applying the Al-Ge Eutectic
title_full_unstemmed The Study of Flip Chip Packaging Technique on LEDs by Applying the Al-Ge Eutectic
title_sort study of flip chip packaging technique on leds by applying the al-ge eutectic
publishDate 2012
url http://ndltd.ncl.edu.tw/handle/34bz96
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