| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 100 === This study consists of the silicon and the copper materials to fabricate the LED lighting module used for the mini projector. The silicon substrate used throughout the experiment has a thickness of 275 μm. After the photolithography process, the silicon substrate was wet etched down to 60 μm at 55 oC. Then a seed layer was deposited on the sample surface by using the electron beam evaporation. The electroplating technique was performed to increase the copper thickness, and later the sample was grinding to make the surface smoother. After following the above steps, the submount used for the light source was finished. But, the copper is easily oxidized, so we also consist of the gold and nickel two different materials for comparison. Finally, we use the traditional package method, i.e. the die attached method. The generated heat can be avoided from the substrate, since the electricity and the heat flow can be separated. For the circuit design, the nine or sixteen LEDs were used in series or parallel connections. After packaging, we measured the LED I-V curve, junction temperature, and thermal resistance, then analysis of the spectra. We found that the higher efficiency was Au/Ni/Cu/Si substrate. The lower forward voltage and compared to the silicon substrate, the measured junction temperature was reduced about 10 K. The luminous efficiency was 23 lm/W.
|
|---|
