| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 100 === In this study, Plasma-enhanced chemical vapor system (PECVD) along with using argon gas (Ar) heated TTIP vapor as the carrier gas transmission, coupled to the oxygen RF plasma excitation gas was used to prepare the thin film of Titanium dioxide (TiO2). TTIP flow rate, O2 flow and RF power of the PECVD process along with annealing temperature was adjusted and optimized. Through the measurement of film characteristics by using X-ray Diffraction (XRD), the analysis by using Field Emission Scanning Electron Microscope (FE-SEM), using UV visible to measure the degradation rate of the Methylene blue(MB) solution, using Contact Angle(CA) to measure titanium dioxide thin film adsorption of methylene blue solution absorption rate, and analyzing titanium dioxide thin film, the process parameters was optimized to establish this film.
These results show that plasma enhanced chemical vapor deposition system, the annealing time and titanium dioxide films have intimate relationship. Moreover, when TTIP carrier gas flow of 80 sccm along with O2 flow of 15 sccm, pressure of 200 mtorr, RF power 300W, annealing temperature of 500 ℃ in 30 minutes, the best anatase (Anatase) peak as well as the grain size at 18 to 35nm range can be obtained by using the Scherrer equation. After optimizing the parameters of the titanium dioxide film that placed at distance of 2.5cm to the UV LED Chip (395nm 72W) with the irradiation light intensity of 250mW/cm2, the degradation rate was up to 56% in the 60 minutes.
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