| Summary: | 碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 100 === In this thesis, the improved electrical and reliability characteristics of metal-oxide- semiconductor (MOS) capacitors with HfLaO dielectrics using laser annealing with were who’s demonstrated frequence. The HfLaO dielectric was formed by the RF sputter. The Ta and Al films were used for the electrode of MOS capacitors. The comparison of HfLaO-gated MOS capacitors with the rapid-thermal annealing (RTA) and laser annealing (LA) were achieved. The results suggest that the HfLaO-gated MOS capacitor with EOT of 1.6 nm and interface trap density of 1.62 x 1010 cm-2eV-1 was explored. On the other hand, the HfLaO-gated MOS capacitors with LA were also addressed. The 1024 nm in wavelength of the Nd:YAG laser was used to demonstrate the electrical and reliability properties of MOS capacitor. The conditions of laser include laser power, speed, and frequency. The results indicate that the HfLaO-gated MOS capacitor with EOT of 1.16 nm was demonstrated by using LA under speed of 100 mm/s, power of 70%, and frequency of 20 ~ 40 kHz. By tuning suitably laser condition, high quality HfLaO dielectric can be obtained.
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