Investigation of the effect of NH3 pre-flow before grown nucleation layer on Nitride-based Light-Emitting Diode
碩士 === 南台科技大學 === 電子工程系 === 100 === In this research, NH3 preflow was employed to nitrify the surface of sapphire before grown AlN nucleation layer. The light emitting diode (LED) with NH3 preflow treatment was fabricated and the conventional LED was also prepared. The effect of electrical propertie...
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| Format: | Others |
| Language: | zh-TW |
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42121284608622219266 |