An Innovative High Voltage Vertical Super-Junction MOSFET by Sidewall Implantation
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 100 === New device concepts (superjunction) for vertical power MOSFETs have been introduced in which the conventional drift region was replaced by alternating p- and n-type regions. Heavily doped p-type columns are formed within the heavily doped n-type epitaxial region...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74097487635932747865 |