Reliability Study of AlN Passivation Effects on AlGaN/GaN HEMT Using Fully-Coupled Self-Consistent Electro-Thermo-Mechanical Analysis

碩士 === 亞洲大學 === 資訊工程學系碩士班 === 100 === In this study, the effect of AlN materials as passivation over AlGaN layer on AlGaN/GaN HEMTs performance was investigated using fully-coupled electro-thermo-mechanical analysis by TCAD simulations and analytic calculations. It found that AlN passivation layer o...

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Bibliographic Details
Main Authors: Briliant Adhi Prabowo, 畢利恩
Other Authors: Gene Sheu
Format: Others
Language:en_US
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/91116431175621978945