Reliability Study On 5V BCD CMOS Device: New PMOS-NBTI Characterization And HCI Assessment On NMOS Bend Gate Structure
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 100 === In this thesis, reliability assessment for low voltage CMOS device had been studied. New characterization for negative bias temperature instability (NBTI) was proposed using fast triangular pulse with elevated temperature to analyze Si-H bond behavior generating...
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| Format: | Others |
| Language: | en_US |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31769353292665240991 |