Integration of MEMS Switch with RF CMOS Dual-band Power Amplifier
碩士 === 國立臺北科技大學 === 機電整合研究所 === 100 === The thesis demonstrates that the Class A power amplifier is presented based on RF CMOS integrates with MEMS switches. The power amplifier is fabricated in TSMC 0.18μm 1P6M CMOS process. Its operation voltage is 1.8 V. The experimental results show that the inp...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/b57362 |