| Summary: | 碩士 === 國立臺北科技大學 === 機電整合研究所 === 100 === The thesis demonstrates that the Class A power amplifier is presented based on RF CMOS integrates with MEMS switches. The power amplifier is fabricated in TSMC 0.18μm 1P6M CMOS process. Its operation voltage is 1.8 V. The experimental results show that the input power is -7dBm, the output power is 15dBm and its PAE is 20% at a frequency of 2.4 GHz and that the input power is 2dBm, the output power is 15dBm and its PAE is 19% at a frequency of 5.2 GHz. We desire to design the high integrated and low power consumption power amplifier. By the circuit simulations, we design the On-chip power amplifier. Avoiding using Lump elements is for the reduction of the area consumption.
A high-frequency micro-electromechanical switches was designed a small size, making easy, low-loss (Low Insertion Loss) and high isolation (High Isolation) high frequency micro electromechanical (MEMS) switches. The switch actuation principle is a way to use static electricity to drive the cantilever beam, when an appropriate voltage was applied, the contact point of cantilever contacts with the transmission line to achieve the purpose of switching. DC operating voltage of cantilever and high frequency signal on transmission line were isolated by using SiO2 at contact point of Cantilever. With the structure after the etching process, after suspension, and apply the ENIG process, not only to effectively prevent the oxidization of aluminum material, but also to reduce the signal transmission line losses.
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