Characterization of RF LDMOS Transistors with Various P-body and Drift Region Implant Doses
碩士 === 國立臺北科技大學 === 電腦與通訊研究所 === 100 === We investigated RF LDMOS performances with various p-body and drift region implant doses in this thesis. DC, S-parameter and power characteristics were measured and analyzed. In addition, we present the relationship between the drain length and the electrica...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65uuef |