Luminescence Analysis of Zinc Selenide Sn-doped Epilayers Grown by Molecular Beam Epitaxy
碩士 === 大同大學 === 光電工程研究所 === 100 === Zn(1-x)SnxSe epilayers were grown on SI-GaAs substrates by molecular beam epitaxy (MBE). The Tin concentration was controlled by varying Tin-cell temperatures. The Tin concentrations, denoted as x with the highest value is 5.3%, are measured by energy-dispersive X...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51782025633342143676 |