Fabrication and Electrical Properties of Densified HfO2 by Rapid Thermal Annealing
碩士 === 大同大學 === 光電工程研究所 === 100 === In this study, rapid thermal annealing was used to densify HfO2 and improve defects of thin films. HfO2 was prepared by radio frequency magnetron sputter at room temperature, after rapid thermal annealing using X-ray photoelectron spectroscopy, X-Ray diffraction,...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49251722618066205855 |