Fabrication and Electrical Properties of Densified HfO2 by Rapid Thermal Annealing

• Main Authors: Wen-Wei Chen, 陳文偉
• Other Authors: Chiung-Wei Lin
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/49251722618066205855

碩士 === 大同大學 === 光電工程研究所 === 100 === In this study, rapid thermal annealing was used to densify HfO2 and improve defects of thin films. HfO2 was prepared by radio frequency magnetron sputter at room temperature, after rapid thermal annealing using X-ray photoelectron spectroscopy, X-Ray diffraction, Fourier transform infrared spectrometer, atomic force microscopy to analysis HfO2, according to the above analysis to verify interface trap charges and other defects were reduced by rapid thermal annealing.Finally,fabricated MIM and MOS devices to measure electrical properties, and used the above analysis to verify the breakdown strength of MIM and C-V characteristic curve of MOS were improved.