Reliability Enhancement of Flip-Chip GaN-based HEMTs
碩士 === 國防大學理工學院 === 光電工程碩士班 === 101 === Due to the fact that gallium nitrides (GaN) exhibits many superior characteristics such as wide band-gap and high electron mobility; AlGaN/GaN high electron mobility transistors (HEMTs) are extremely suitable for the uses of high power and high-frequency micro...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96008906066274578927 |