Study on Micro Stress Sensors for Through-Silicon-Via (TSV) Device
碩士 === 國防大學理工學院 === 機械工程碩士班 === 101 === Because of the rapid development of the microelectronics industry, newly developed technologies such as the Through Silicon Via (TSV) for three-dimensional packaging designs became more and more important. Since the TSV components are extremely small, only mi...
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ndltd-TW-101CCIT04890082015-10-13T22:07:37Z http://ndltd.ncl.edu.tw/handle/91953496737743871278 Study on Micro Stress Sensors for Through-Silicon-Via (TSV) Device 應用於直通矽晶穿孔元件之微應力計研究 Chu, Chia-Fa 朱嘉發 碩士 國防大學理工學院 機械工程碩士班 101 Because of the rapid development of the microelectronics industry, newly developed technologies such as the Through Silicon Via (TSV) for three-dimensional packaging designs became more and more important. Since the TSV components are extremely small, only micro stress sensors fabricated through MOSFET process are able to measure the stress of the TSV components. In this thesis, N-type piezoresistive micro stress sensors have been designed, fabricated, and calibrated successfully to measure the stress of the TSV components. Piezoresistive sensor designs are different from the previous ones from the literature, and there are various geometric designs for comparison. Besides, in order to effectively eliminate the related difficulties from minimizing the piezoesistor size, various factors that affect the accuracies on using the piezoesistive sensors were considered and studied in this thesis. Results from this study can be applied to measure the stress of the TSV components and stress inside the micro-electronic packaging structure. Lwo, Ben-Je 羅本喆 2013 學位論文 ; thesis 58 zh-TW |
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碩士 === 國防大學理工學院 === 機械工程碩士班 === 101 === Because of the rapid development of the microelectronics industry, newly developed technologies such as the Through Silicon Via (TSV) for three-dimensional packaging designs became more and more important. Since the TSV components are extremely small, only micro stress sensors fabricated through MOSFET process are able to measure the stress of the TSV components.
In this thesis, N-type piezoresistive micro stress sensors have been designed, fabricated, and calibrated successfully to measure the stress of the TSV components. Piezoresistive sensor designs are different from the previous ones from the literature, and there are various geometric designs for comparison. Besides, in order to effectively eliminate the related difficulties from minimizing the piezoesistor size, various factors that affect the accuracies on using the piezoesistive sensors were considered and studied in this thesis.
Results from this study can be applied to measure the stress of the TSV components and stress inside the micro-electronic packaging structure.
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author2 |
Lwo, Ben-Je |
author_facet |
Lwo, Ben-Je Chu, Chia-Fa 朱嘉發 |
author |
Chu, Chia-Fa 朱嘉發 |
spellingShingle |
Chu, Chia-Fa 朱嘉發 Study on Micro Stress Sensors for Through-Silicon-Via (TSV) Device |
author_sort |
Chu, Chia-Fa |
title |
Study on Micro Stress Sensors for Through-Silicon-Via (TSV) Device |
title_short |
Study on Micro Stress Sensors for Through-Silicon-Via (TSV) Device |
title_full |
Study on Micro Stress Sensors for Through-Silicon-Via (TSV) Device |
title_fullStr |
Study on Micro Stress Sensors for Through-Silicon-Via (TSV) Device |
title_full_unstemmed |
Study on Micro Stress Sensors for Through-Silicon-Via (TSV) Device |
title_sort |
study on micro stress sensors for through-silicon-via (tsv) device |
publishDate |
2013 |
url |
http://ndltd.ncl.edu.tw/handle/91953496737743871278 |
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