Structural and electrical properties of the europium-doped indium zinc oxide thin film transistors
碩士 === 國立中正大學 === 光機電整合工程研究所 === 101 === In this study, we propose the fabrication of amorphous Europium doped InZnO (EIZO) thin film transistors (TFTs) using a so-gel method. To analyze the effects of Eu3+ incorporation on solution-processed amorphous EIZO TFTs, Hall measurements, transmittance mea...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76458936408664557876 |