Improvement of ESD Robustness of Flip-Chip GaN-based HEMT with MSM-2DEG Varactor
碩士 === 長庚大學 === 光電工程研究所 === 101 === AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) have great potential in high frequency and high power application. However, under high current operation condition, the excess heat of the HEMT devices will decrease the carrier mobility in the c...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94378420759323113652 |