Switching mechanism transition induced by annealing treatment in Pt/ZnO/Cr/ZnO/Pt resistive memory
碩士 === 長庚大學 === 電子工程學系 === 101 === In this study, ZnO thin film embedding a Cr metal layer with Pt electrodes were prepared for nonvolatile resistive memory applications. By modifying the Cr thickness and annealing temperature of the device, the memory cell not only exhibits reversible and steady b...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09962219134105447200 |