The Investigation of the Enhancement-Mode AlGaN/GaN HEMTs and Realization of the DC-to-DC Boost Converter
博士 === 長庚大學 === 電子工程學系 === 101 === In recent years, the energy problem is more and more important. GaN materials have excellent characteristics such as thermal stable ability, high breakdown field, high saturation velocity, high current density caused by high piezoelectricity which make the on-sta...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35584536162980355246 |