The Study of MoO3 Charge Trapping Layer with CF4 Plasma Treatment in Flash Memory Applications.
碩士 === 長庚大學 === 電子工程學系 === 101 === In this thesis, the high-k material MoO3 and Ti-doped MoO3 as charge trapping layer have been investigated. High-k materials as trapping layers applied in MOHOS-type memories have attract much attention because MOHOS-type memories have potential to replace the...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/46484024857095515231 |