The Study of MoO3 Charge Trapping Layer with CF4 Plasma Treatment in Flash Memory Applications.

• Main Authors: Szu Chien Chen, 陳思謙
• Other Authors: C. H. Kao
• Format: Others
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/46484024857095515231

碩士 === 長庚大學 === 電子工程學系 === 101 === In this thesis, the high-k material MoO3 and Ti-doped MoO3 as charge trapping layer have been investigated. High-k materials as trapping layers applied in MOHOS-type memories have attract much attention because MOHOS-type memories have potential to replace the conventional SONOS-type memory owing to its high trap density , thermal stability, large conduction band offset and equivalent oxide thickness (EOT). Our results indicated that the Ti-doped MoO3 film annealed at 900oC exhibited a superior memory performance such as a larger memory window, faster program/erase speed, and better data retention. In addition, we utilized the CF4 plasma treatment on MoO3 trapping layer because the MoO3 trapping layer treated with CF4 plasma exhibited an acceptable hysteresis and higher program and erase speed. Finally, we compared the physical and electrical characteristics of CeO2 and Ti-doped CeO2 films applied in MOHOS-type memory. In our experiment, the Ti-doped CeO2 films obtained a larger width of the C-V hysteresis loop of 6.1V, a higher flatband voltage shift, a smaller charge loss of 9.9% and better endurance (2.5V after 104 cycle).