Investigation of Non-ideal Characteristics in AlGaN∕ GaN High Electron Mobility Transistors
博士 === 長庚大學 === 電子工程學系 === 101 === In recent years, AlGaN/GaN high electron mobility transistor (HEMT) become an important technology because of their high power density, power handling capabilities, high temperature applications and high electronic velocities. Although the RF technology is rapid pr...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69352420627550685947 |