Solid phase epitaxitial regrowth of amorphous silicon with phosphorus and carbon coimplantation
碩士 === 長庚大學 === 電子工程學系 === 101 === Experiment was performed to study phosphorus diffusion in amorphous silicon under heavy carbon implantation. Samples were annealed at different temperatures to check the thickness of residual amorphous layer. The solid phase epitaxial regrowth of amorphous was reta...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12775890985591287358 |