Study of Multi Gate Field-Effect Transistor with High-k Metal-Gate by Low Temperature Microwave Annealing
碩士 === 中華大學 === 電機工程學系碩士班 === 101 === To improve the performance of complementary metal-oxide-semiconductor (CMOS) devices, it is necessary to use a pair of metals with work functions that are near the conduction-band and valence-band edges of silicon to replace conventional n+/p+ poly-Si gate mater...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6fpjed |