The growth of ZnO thin films and the application study of thepiezoelectric transducers

• Main Authors: Wan-Yao Lin, 林宛瑤
• Other Authors: Hui-Ling Kao
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/22165245798517260026

碩士 === 中原大學 === 電子工程研究所 === 101 === In this thesis, the zinc oxide (ZnO) films were deposited on ITO/PET substrate at room temperature by a magnetron reactive sputtering system. The effects of oxygen ratio on the structure of ZnO films were studied. X-ray diffraction (XRD) and Field-Emission Scanning electron microscopy (FE-SEM) were employed to characterize the crystallinity and film growth rate. All ZnO films exhibit columnar structure and preferred orientated with c-axis perpendicular to substrates. The optimal deposition parameters for ZnO films are sputtering pressure of 15mTorr, RF power of 90 W and oxygen concentration of 5 %. The optimized ZnO films were obtained to fabricate piezoelectric transducers. The vertical-pressure testing equipment was employed to measure the open-circuit voltage of the piezoelectric devices. Using the piezoelectric transducer with ZnO film thickness of 7μm, the device area was 10 cm2, the maximum open-circuit piezoelectric voltage of 0.52V can be obtained with the applied pressure of 6kg/cm2. The results can bring about the development of the piezoelectric transducers using ZnO films for low frequency vibration energy.