Characterization of AlN thin film deposited by DC sputtering and laser annealing
碩士 === 中原大學 === 電子工程研究所 === 101 === The Aluminum Nitride (AlN) thin films were deposited by reactive DC magnetron sputtering method on Sapphire and Si substrates at room temperature and 550℃, then annealed by CO2 laser. To study the characteristics of AlN thin films grown at low substrate temp...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85391679295652294041 |