Characterization of Power Semiconductor Device: GaN High Electron Mobility Transistor (HEMT)
碩士 === 健行科技大學 === 電子工程所 === 101 === This research is make use of Stantaurus Workbench Integration of emiconductor device electrical and process simulation software to simulate GaN HEMT device electrical and analyze, Use GaN substrate grown on AlGaN as a barrier layer and then combining the GaN cap l...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43654513093737798039 |