Study of Photoluminescence Spectra of the Low-Temperature Growth ZnO Thin Films
碩士 === 大葉大學 === 電機工程學系 === 101 === The epitaxial growth ZnO films were deposited on Si substrates by rf magnetron sputtering with substrate temperature below 300 ℃. The growth of thin films was performed at a pressure of 40 mtorr Ar and O2 with a sputtering power of 100 W. The deposited samples were...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/95138086554655888623 |