Resistive Switching Characteristics of SiO2-Based Resistive Memory by Different Plasma Treatments
碩士 === 國立高雄應用科技大學 === 電子工程系碩士班 === 101 === Cu/SiO2/Pt structures were fabricated to investigate their resistive switching behavior. The switching mechanism can be explained by a Cu filament model with the electrochemical reaction. The formation/rupture of a Cu filament was determined by dissolutio...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/aa3kxn |