Stability of Amorphous InGaZnO TFTs Using an Organic Passivation Layer

碩士 === 明新科技大學 === 電子工程研究所 === 101 === Recently, studies on transparent oxide thin film transistors have attract a lot interest because of high mobility and high aspect ratio in display applications. Among all oxide semiconductors, amorphous indium gallium zinc oxide (a-IGZO) TFTs is fast developed....

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Bibliographic Details
Main Authors: Liang-Cheng Yain, 顏良承
Other Authors: Chii-Wen Chen
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/56494697491192621836