Junction Breakdown and Punch-Through Effect for 28nm n/p-MOSFETs
碩士 === 明新科技大學 === 電子工程研究所 === 101 === With the advancement of technology, the feature size of field-effect transistors coming from semiconductor manufacturing technology has evolved from sub-micron to 28nm process generation or beyond. Following the Moore's law, besides the reduction of process...
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| Format: | Others |
| Language: | zh-TW |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09787196638926436724 |