Junction Breakdown and Punch-Through Effect for 28nm n/p-MOSFETs

碩士 === 明新科技大學 === 電子工程研究所 === 101 === With the advancement of technology, the feature size of field-effect transistors coming from semiconductor manufacturing technology has evolved from sub-micron to 28nm process generation or beyond. Following the Moore's law, besides the reduction of process...

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Bibliographic Details
Main Authors: Chih-Hsuan Wang, 王志玄
Other Authors: Bing-Mau Chen
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/09787196638926436724

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