Mobility Enhancement in a-IGZO TFT with Polymer/High-K Nanoparticle Composite Dielectric Layer
碩士 === 國立中興大學 === 光電工程研究所 === 101 === In this study, we report the fabrication of an amorphous indium–gallium–zinc-oxide (a-IGZO) thin-film transistor with an insulating layer made by poly (4-vinylphenol) (PVP) blending with high-k nanoparticle Al2O3 and ZrO2 composites on a glass substrate. At firs...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/783dv8 |