Investigation on Material Removal Process for Silicon Carbide Chemical Mechanical Polishing
碩士 === 國立勤益科技大學 === 機械工程系 === 101 === Silicon carbide (SiC) has excellent thermal conductivity, electrical conductivity, chemical stability and high wide band gap advantages, so it can become the next generation of high-temperature and high-power semiconductor devices, light-emitting device, high...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68010260007126071718 |