Low-Temperature Zinc Oxide Thin Film Transistors with Direct Assembly of Gold Nano-particles Charge Trapping Layer with Thermal Annealing for Improving Nonvolatile Memory Applications
碩士 === 國立勤益科技大學 === 電子工程系 === 101 === This work reports a versatile technique for enhancing charge storage nonvolatile memory device using a direct assembly of gold-nanoparticles (AuNPs) as a charge trapping layer and zinc oxide (ZnO) as semiconductor layer. We have used two types of linker to depos...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18660353100626830874 |