Summary: | 碩士 === 國立勤益科技大學 === 電子工程系 === 101 === This work reports a versatile technique for enhancing charge storage nonvolatile memory device using a direct assembly of gold-nanoparticles (AuNPs) as a charge trapping layer and zinc oxide (ZnO) as semiconductor layer. We have used two types of linker to deposit AuNPs, which are 3-aminopropyltrimethoxysilane (APTMS) and 3-mercaptopropyltriethoxysilane (MPTES) followed by gold colloidal. Atomic force microscopy (AFM) image showed the surface morphology of the well-separated immobilized AuNPs on a SiO2/p-Si. According to the programming operations, the memory device showed good programmable memory characteristics with 8 V memory windows with better characteristics, at last, thermal annealing for improving nonvolatile memory has been research.
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