Low-Temperature Zinc Oxide Thin Film Transistors with Direct Assembly of Gold Nano-particles Charge Trapping Layer with Thermal Annealing for Improving Nonvolatile Memory Applications

碩士 === 國立勤益科技大學 === 電子工程系 === 101 === This work reports a versatile technique for enhancing charge storage nonvolatile memory device using a direct assembly of gold-nanoparticles (AuNPs) as a charge trapping layer and zinc oxide (ZnO) as semiconductor layer. We have used two types of linker to depos...

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Main Authors:	Sheng-Jyun Wu, 吳昇峻
Other Authors:	Hsin-Chiang You
Format:	Others
Language:	en_US
Published:	2013
Online Access:	http://ndltd.ncl.edu.tw/handle/18660353100626830874

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spelling	ndltd-TW-101NCIT57750132016-03-14T04:13:56Z http://ndltd.ncl.edu.tw/handle/18660353100626830874 Low-Temperature Zinc Oxide Thin Film Transistors with Direct Assembly of Gold Nano-particles Charge Trapping Layer with Thermal Annealing for Improving Nonvolatile Memory Applications 低溫製程氧化鋅薄膜電晶體及自組裝奈米金電荷捕捉層應用於快閃記憶體與熱處理電性之改善 Sheng-Jyun Wu 吳昇峻碩士國立勤益科技大學電子工程系 101 This work reports a versatile technique for enhancing charge storage nonvolatile memory device using a direct assembly of gold-nanoparticles (AuNPs) as a charge trapping layer and zinc oxide (ZnO) as semiconductor layer. We have used two types of linker to deposit AuNPs, which are 3-aminopropyltrimethoxysilane (APTMS) and 3-mercaptopropyltriethoxysilane (MPTES) followed by gold colloidal. Atomic force microscopy (AFM) image showed the surface morphology of the well-separated immobilized AuNPs on a SiO2/p-Si. According to the programming operations, the memory device showed good programmable memory characteristics with 8 V memory windows with better characteristics, at last, thermal annealing for improving nonvolatile memory has been research. Hsin-Chiang You 游信強 2013 學位論文 ; thesis 89 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 國立勤益科技大學 === 電子工程系 === 101 === This work reports a versatile technique for enhancing charge storage nonvolatile memory device using a direct assembly of gold-nanoparticles (AuNPs) as a charge trapping layer and zinc oxide (ZnO) as semiconductor layer. We have used two types of linker to deposit AuNPs, which are 3-aminopropyltrimethoxysilane (APTMS) and 3-mercaptopropyltriethoxysilane (MPTES) followed by gold colloidal. Atomic force microscopy (AFM) image showed the surface morphology of the well-separated immobilized AuNPs on a SiO2/p-Si. According to the programming operations, the memory device showed good programmable memory characteristics with 8 V memory windows with better characteristics, at last, thermal annealing for improving nonvolatile memory has been research.
author2	Hsin-Chiang You
author_facet	Hsin-Chiang You Sheng-Jyun Wu 吳昇峻
author	Sheng-Jyun Wu 吳昇峻
spellingShingle	Sheng-Jyun Wu 吳昇峻 Low-Temperature Zinc Oxide Thin Film Transistors with Direct Assembly of Gold Nano-particles Charge Trapping Layer with Thermal Annealing for Improving Nonvolatile Memory Applications
author_sort	Sheng-Jyun Wu
title	Low-Temperature Zinc Oxide Thin Film Transistors with Direct Assembly of Gold Nano-particles Charge Trapping Layer with Thermal Annealing for Improving Nonvolatile Memory Applications
title_short	Low-Temperature Zinc Oxide Thin Film Transistors with Direct Assembly of Gold Nano-particles Charge Trapping Layer with Thermal Annealing for Improving Nonvolatile Memory Applications
title_full	Low-Temperature Zinc Oxide Thin Film Transistors with Direct Assembly of Gold Nano-particles Charge Trapping Layer with Thermal Annealing for Improving Nonvolatile Memory Applications
title_fullStr	Low-Temperature Zinc Oxide Thin Film Transistors with Direct Assembly of Gold Nano-particles Charge Trapping Layer with Thermal Annealing for Improving Nonvolatile Memory Applications
title_full_unstemmed	Low-Temperature Zinc Oxide Thin Film Transistors with Direct Assembly of Gold Nano-particles Charge Trapping Layer with Thermal Annealing for Improving Nonvolatile Memory Applications
title_sort	low-temperature zinc oxide thin film transistors with direct assembly of gold nano-particles charge trapping layer with thermal annealing for improving nonvolatile memory applications
publishDate	2013
url	http://ndltd.ncl.edu.tw/handle/18660353100626830874
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Low-Temperature Zinc Oxide Thin Film Transistors with Direct Assembly of Gold Nano-particles Charge Trapping Layer with Thermal Annealing for Improving Nonvolatile Memory Applications

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