Dielectric and interfacial characterizations of the Ta/HfO2-TiO2/Si related composition spreads using sputtering for the advanced gate stack
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 101 === In this thesis, HfO2-TiO2 related composition spreads are deposited on Si substrates as the dielectric layers for MOS structure devices using the state-of-the-art combinatorial sputtering system. The structures-properties -compositions relationship was stu...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85915892788972450703 |