| Summary: | 碩士 === 國立成功大學 === 資訊工程學系碩博士班 === 101 === As technology node advances, Extreme Ultraviolet Lithography (EUVL)
is regarded as the most promising technology for improving the lithographic
printability. However, there are still several challenges in EUVL like the most
critical
are e ect that causes patterning distortions. As a result, dummy lls
are added to a layout (i.e., dummi cation) to compensate the
are e ect. Al-though dummy lls are used to alleviate the
are e ect, process hotspots still
cannot be fully eliminated and are essential to be detected in the early design
stages. Pattern matching is one of the most popular and widely-used tech-niques to detect the process hotspots. However, existing pattern-matching-based algorithms may not e ectively detect all process hotspots under the
consideration of dummi cation. In this thesis, we propose a two-stage triangle-based algorithm for process hotspot classi cation while considering the impact
of dummi cation in EUVL. Experimental results show that our proposed algo-rithm is very e ective and e cient compared with the state-of-the-art process
hotspot classi cation algorithm.
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