AlGaN/GaN Heterostructure with a Ga2O3 Cap Layer Ultraviolet Tri-Band Photodetectors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === In this thesis, the fabrication and analysis of AlGaN/GaN heterostructure with a Ga2O3 cap layer ultraviolet (UV) photodetectors (PDs) were performed. We enhanced the rejection ratios and reduced the dark current by various methods so as to fabricate tri-ba...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71585462863505389858 |