Fabrication of GaN-Based Light Emitting Diodes with Nanosphere Structures
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === In order to improve light extraction efficiency (LEE) and internal quantum efficiency (IQE) of GaN-based light-emitting diodes (LEDs), the self-assembled SiO2 nanosphere monolayer structure is introduced and studied. Three new nanosphere monolayer-relat...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49030196378861344271 |