Liquid-Phase-Deposited High Dielectric Zirconium Oxide for AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === Because of reducing dimensions of devices, the capacitance can’t increase by increasing the area and reducing the oxide thickness. Nowadays the dominating method is that using the high-k dielectric material to be gate oxidized layer which can improve gate i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02480942391680636677 |