Enhanced barrier properties and thermal stability of the seedless barrier for sub-30nm metallization application
博士 === 國立成功大學 === 電機工程學系碩博士班 === 101 === As the minimum feature size of microelectronic devices shrinks down to 32 nm and beyond, an increase in the resistivity of metal lines and the bad step coverage with feature shrinkage will be one of the semiconductor manufacturing challenges. In the first...
Main Authors: | Chia-YangWu, 吳家揚 |
---|---|
Other Authors: | Wen-Hsi Lee |
Format: | Others |
Language: | en_US |
Published: |
2012
|
Online Access: | http://ndltd.ncl.edu.tw/handle/67328096012169734188 |
Similar Items
-
Investigations of Seedless Cu Diffusion Barriers for Advanced Cu Metallization
by: Jia-BinYeh, et al.
Published: (2010) -
Study of Ultra-thin Seedless Cu Diffusion Barrier in Advanced Cu Metallization
by: Kuo-ChungHsu, et al.
Published: (2011) -
Ru as a diffusion barrier for sub-45-nm Cu contact plug
by: Jia-Huei Lin, et al.
Published: (2009) -
Investigation of thermal stability of Ta diffusion barrier affecting by magnesium in Cu metallization
by: 麥凱玲
Published: (2002) -
Stability, structure, and barrier properties of self-assembled films on metal supports
by: Jennings, G. Kane (Gannon Kane), 1970-
Published: (2009)