Investigation of ZnO MOS Device with Magnetron Co-Sputtering SiO2-ZnO Nanocomposites Insulator Layer
碩士 === 國立成功大學 === 光電科學與工程學系 === 101 === In the recent years many nanodots memories have been researched for the reliability of using it to replace floating gate memories. In many of the components of the nanodots, the metal parts of the nanodots has been used as the memory storage device and it is p...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26344659475871870384 |