Improved Optoelectronic Characteristics of GaN-Based Devices with Periodic Dielectric Structures and Quantum Well Structure Design by Metalorganic Vapor Phase Epitaxy
博士 === 國立成功大學 === 光電科學與工程學系 === 101 === In this dissertation, growth and fabrication of III-nitride-based optoelectronic devices by Metal Organic Vapor Phase Epitaxial (MOVPE) have been studies. We achieved a small reverse leakage current because of the quality improvement of the lateral growth-i...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40852328250448536369 |